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SemiWell Semiconductor Bi-Directional Triode Thyristor
STP16A60
Symbol
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) High Commutation dv/dt Non-isolated Type TO-220
2.T2

3.Gate
1.T1
General Description
This devices is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay.
1
2
3
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25C unless otherwise specifed ) Condition Ratings
600 TC = 98 C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive 16 155/170 120 5.0 0.5 2.0 10 - 40 ~ 125 - 40 ~ 150 2.0
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature Mass
Units
V A A A2 s W W A V C C g
Oct, 2002. Rev. 1
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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STP16A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage Non-Trigger Gate Voltage Critical Rate of Rise Off-State Voltage at Commutation Holding Current Thermal Impedance Junction to case TJ = 125 C, VD = 1/2 VDRM TJ = 125 C, [di/dt]c = -8.0 A/ms, VD=2/3 VDRM Gate Trigger Voltage VD = 6 V, RL=10 Gate Trigger Current VD = 6 V, RL=10
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 C IT = 25 A, Inst. Measurement
Ratings Min.
0.2 10
Typ.
25
Max.
2.0 1.4 30 30 30 1.5 1.5 1.5 1.4
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c)
mA V
mA
V
V
V/
mA C/W
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STP16A60
Fig 1. Gate Characteristics Fig 2. On-State Voltage
10
1
VGM (10V)
On-State Current [A]
10
2
Gate Voltage [V]
PGM (5W) PG(AV) (0.5W) 25
10
0
TJ = 125 C
1
o
10
IGM (2A)
TJ = 25 C
o
10
-1
VGD (0.2V)
1
10
0
10
10
2
10
3
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Gate Current [mA]
On-State Voltage [V]
Fig 3. On State Current vs. Maximum Power Dissipation
20
o
Fig 4. On State Current vs. Allowable Case Temperature
130
18
Power Dissipation [W]
16 14 12 10 8 6 4 2 0 0 2

360
Allowable Case Temperature [ C]
2
= 180 o = 150 o = 120 = 90 = 60 = 30
o o o
o
120 110 100 90
: Conduction Angle

= 30
2
o o
80 70 60
360
: Conduction Angle

10 12 14 16
= 60 o = 90 o = 120 o = 150 o = 180
18 20
4
6
8
10
12
14
16
18
20
0
2
4
6
8
RMS On-State Current [A]
RMS On-State Current [A]
Fig 5. Surge On-State Current Rating ( Non-Repetitive )
200
Fig 6. Gate Trigger Voltage vs. Junction Temperature
10
Surge On-State Current [A]
150
60Hz
VGT (25 C)
VGT (t C)
V
1
100
o
o
_ GT3
50Hz
50
V V
+ GT1 _ GT1
0 0 10
10
1
10
2
0.1 -50
0
50
100
o
150
Time (cycles)
Junction Temperature [ C]
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STP16A60
Fig 7. Gate Trigger Current vs. Junction Temperature
10
10
Fig 8. Transient Thermal Impedance
1
Transient Thermal Impedance [ C/W]
IGT (25 C)
IGT (t C)
o
o
o
1
I
+ GT1
I I
0.1 -50
_ GT3
_ GT1
0
50
100
o
150
0.1 -2 10
10
-1
10
0
10
1
10
2
Junction Temperature [ C]
Time (sec)
Fig 9. Gate Trigger Characteristics Test Circuit
10
10
10

6V
A

RG
6V
A

RG
6V
A
V
V
V
RG
Test Procedure
Test Procedure
Test Procedure
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STP16A60
TO-220 Package Dimension Dim. A B C D E F G H I J K L M N O mm Typ. Inch Typ.
Min. 9.7 6.3 9.0 12.8 1.2
Max. 10.1 6.7 9.47 13.3 1.4
Min. 0.382 0.248 0.354 0.504 0.047
Max. 0.398 0.264 0.373 0.524 0.055
1.7 2.5 3.0 1.25 2.4 5.0 2.2 1.42 0.45 0.7 3.6 3.4 1.4 2.7 5.15 2.6 1.62 0.6 0.9 0.118 0.049 0.094 0.197 0.087 0.056 0.018 0.027
0.067 0.098 0.134 0.055 0.106 0.203 0.102 0.064 0.024 0.035 0.142
E B
A C1.0
H
I
F
C M
G 1 D 2 3
L
1. T1 2. T2 3. Gate
N O
J K
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